Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
2.3mm
Zemlja podrijetla
Japan
Detalji o proizvodu
MOSFET Transistors, Toshiba
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 8,35
€ 1,67 komadno (u pakiranju od 5) (bez PDV-a)
€ 10,44
€ 2,088 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 8,35
€ 1,67 komadno (u pakiranju od 5) (bez PDV-a)
€ 10,44
€ 2,088 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
Kupujte na veliko
količina | jedinična cijena | Po pakiranje |
---|---|---|
5 - 20 | € 1,67 | € 8,35 |
25+ | € 1,44 | € 7,20 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
2.3mm
Zemlja podrijetla
Japan
Detalji o proizvodu