Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Series
U-MOSVIII-H
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Zemlja podrijetla
Japan
Detalji o proizvodu
MOSFET Transistors, Toshiba
€ 6,40
€ 1,28 komadno (u pakiranju od 5) (bez PDV-a)
€ 8,00
€ 1,60 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 6,40
€ 1,28 komadno (u pakiranju od 5) (bez PDV-a)
€ 8,00
€ 1,60 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 20 | € 1,28 | € 6,40 |
| 25+ | € 1,11 | € 5,55 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Series
U-MOSVIII-H
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Zemlja podrijetla
Japan
Detalji o proizvodu


