N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP Toshiba TPH3300CNH

RS kataloški broj:: 171-2200robna marka: ToshibaProizvođački broj:: TPH3300CNH
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Toshiba

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

150 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

10.6 nC @ 10 V

Length

5mm

Height

0.95mm

Forward Diode Voltage

1.2V

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Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

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P.O.A.

N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP Toshiba TPH3300CNH

5000

Dostupno u više komada 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP Toshiba TPH3300CNH
Informacije o stanju skladišta trenutno nisu dostupne.

5000

Dostupno u više komada 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Toshiba

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

150 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

10.6 nC @ 10 V

Length

5mm

Height

0.95mm

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more