Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
0.85mm
Forward Diode Voltage
1.2V
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,56
Each (On a Reel of 5000) (bez PDV-a)
€ 0,70
Each (On a Reel of 5000) (s PDV-om)
5000
€ 0,56
Each (On a Reel of 5000) (bez PDV-a)
€ 0,70
Each (On a Reel of 5000) (s PDV-om)
5000
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
5000 - 5000 | € 0,56 | € 2.800,00 |
10000+ | € 0,53 | € 2.650,00 |
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Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Height
0.85mm
Forward Diode Voltage
1.2V