N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M

RS kataloški broj:: 171-2206robna marka: ToshibaProizvođački broj:: TPN14006NH,L1Q(M
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Toshiba

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

60 V

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

0.85mm

Forward Diode Voltage

1.2V

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

€ 0,56

Each (On a Reel of 5000) (bez PDV-a)

€ 0,70

Each (On a Reel of 5000) (s PDV-om)

N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M

€ 0,56

Each (On a Reel of 5000) (bez PDV-a)

€ 0,70

Each (On a Reel of 5000) (s PDV-om)

N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M
Informacije o stanju skladišta trenutno nisu dostupne.

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5000 - 5000€ 0,56€ 2.800,00
10000+€ 0,53€ 2.650,00

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Toshiba

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

60 V

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

0.85mm

Forward Diode Voltage

1.2V