Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Japan
Detalji o proizvodu
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
€ 10,10
€ 2,02 komadno (u pakiranju od 5) (bez PDV-a)
€ 12,62
€ 2,525 komadno (u pakiranju od 5) (s PDV-om)
5
€ 10,10
€ 2,02 komadno (u pakiranju od 5) (bez PDV-a)
€ 12,62
€ 2,525 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 20 | € 2,02 | € 10,10 |
| 25+ | € 1,74 | € 8,70 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
Japan
Detalji o proizvodu


