Tehnička dokumentacija
Tehnički podaci
Proizvođač
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Number of Elements per Chip
1
Width
3.15mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China
€ 14,75
€ 0,59 komadno (u pakiranju od 25) (bez PDV-a)
€ 18,44
€ 0,738 komadno (u pakiranju od 25) (s PDV-om)
Standard
25
€ 14,75
€ 0,59 komadno (u pakiranju od 25) (bez PDV-a)
€ 18,44
€ 0,738 komadno (u pakiranju od 25) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Number of Elements per Chip
1
Width
3.15mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China


