N-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH402DN-T1-GE3

RS kataloški broj:: 178-3696robna marka: Vishay SiliconixProizvođački broj:: SiSH402DN-T1-GE3
brand-logo
View all in MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Zemlja podrijetla

China

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

P.O.A.

N-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH402DN-T1-GE3

P.O.A.

N-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH402DN-T1-GE3
Informacije o stanju skladišta trenutno nisu dostupne.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Zemlja podrijetla

China