Tehnička dokumentacija
Tehnički podaci
Proizvođač
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
250 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
163 nC @ 10 V
Height
11.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Automotive Standard
AEC-Q101
Zemlja podrijetla
Taiwan, Province Of China
€ 22,00
€ 4,40 Each (Supplied on a Reel) (bez PDV-a)
€ 27,50
€ 5,50 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
5
€ 22,00
€ 4,40 Each (Supplied on a Reel) (bez PDV-a)
€ 27,50
€ 5,50 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
5
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
250 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
163 nC @ 10 V
Height
11.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Automotive Standard
AEC-Q101
Zemlja podrijetla
Taiwan, Province Of China


