Tehnička dokumentacija
Tehnički podaci
Proizvođač
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
106 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
11.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Automotive Standard
AEC-Q101
Zemlja podrijetla
Taiwan, Province Of China
€ 20,70
€ 2,07 komadno (u pakiranju od 10) (bez PDV-a)
€ 25,88
€ 2,588 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 20,70
€ 2,07 komadno (u pakiranju od 10) (bez PDV-a)
€ 25,88
€ 2,588 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
106 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
11.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Automotive Standard
AEC-Q101
Zemlja podrijetla
Taiwan, Province Of China


