Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.5V
Number of Channels
1
Number of Pins
6
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2μs
Maximum Input Current
60mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Logic Output
Yes
Maximum Current Transfer Ratio
30%
Maximum Operating Temperature
100°C
Minimum Current Transfer Ratio
10%
Typical Fall Time
2μs
Standards/Approvals
EN 60065, EN 60065:2002, EN 60335, EN 60950, EN 60950:2000, UL1577
Series
4N27
Automotive Standard
No
Detalji o proizvodu
Optocoupler, Transistor Output, 4Nxx Series, Vishay Semiconductor
Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
Optocouplers, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
€ 21,50
€ 0,43 komadno (u cijevi od 50) (bez PDV-a)
€ 26,88
€ 0,538 komadno (u cijevi od 50) (s PDV-om)
50
€ 21,50
€ 0,43 komadno (u cijevi od 50) (bez PDV-a)
€ 26,88
€ 0,538 komadno (u cijevi od 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 50 - 200 | € 0,43 | € 21,50 |
| 250 - 450 | € 0,42 | € 21,00 |
| 500 - 1200 | € 0,40 | € 20,00 |
| 1250 - 2450 | € 0,37 | € 18,50 |
| 2500+ | € 0,36 | € 18,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayProduct Type
Optocoupler
Mount Type
Through Hole
Maximum Forward Voltage
1.5V
Number of Channels
1
Number of Pins
6
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2μs
Maximum Input Current
60mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Logic Output
Yes
Maximum Current Transfer Ratio
30%
Maximum Operating Temperature
100°C
Minimum Current Transfer Ratio
10%
Typical Fall Time
2μs
Standards/Approvals
EN 60065, EN 60065:2002, EN 60335, EN 60950, EN 60950:2000, UL1577
Series
4N27
Automotive Standard
No
Detalji o proizvodu
Optocoupler, Transistor Output, 4Nxx Series, Vishay Semiconductor
Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor.
