Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
77 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 11,30
€ 2,26 komadno (u pakiranju od 5) (bez PDV-a)
€ 14,12
€ 2,825 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 11,30
€ 2,26 komadno (u pakiranju od 5) (bez PDV-a)
€ 14,12
€ 2,825 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 45 | € 2,26 | € 11,30 |
| 50 - 120 | € 1,95 | € 9,75 |
| 125 - 245 | € 1,91 | € 9,55 |
| 250 - 495 | € 1,86 | € 9,30 |
| 500+ | € 1,55 | € 7,75 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
77 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu


