Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Provjerite ponovno kasnije.
€ 3,20
komadno (bez PDV-a)
€ 4,00
komadno (s PDV-om)
1
€ 3,20
komadno (bez PDV-a)
€ 4,00
komadno (s PDV-om)
1
Kupujte na veliko
količina | jedinična cijena |
---|---|
1 - 9 | € 3,20 |
10 - 49 | € 2,85 |
50 - 99 | € 2,80 |
100 - 249 | € 2,75 |
250+ | € 2,65 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Zemlja podrijetla
China
Detalji o proizvodu