Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Width
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Height
3.37mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 20,50
€ 2,05 Each (Supplied as a Tape) (bez PDV-a)
€ 25,62
€ 2,56 Each (Supplied as a Tape) (s PDV-om)
Proizvodno pakiranje (traka)
10
€ 20,50
€ 2,05 Each (Supplied as a Tape) (bez PDV-a)
€ 25,62
€ 2,56 Each (Supplied as a Tape) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (traka)
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena |
|---|---|
| 10 - 49 | € 2,05 |
| 50 - 99 | € 1,92 |
| 100 - 249 | € 1,85 |
| 250+ | € 1,81 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Width
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Height
3.37mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


