Vishay N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP IRFI620GPBF

Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 13,00
€ 2,60 komadno (u pakiranju od 5) (bez PDV-a)
€ 16,25
€ 3,25 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 13,00
€ 2,60 komadno (u pakiranju od 5) (bez PDV-a)
€ 16,25
€ 3,25 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 45 | € 2,60 | € 13,00 |
| 50 - 120 | € 2,24 | € 11,20 |
| 125 - 245 | € 2,20 | € 11,00 |
| 250 - 495 | € 2,14 | € 10,70 |
| 500+ | € 1,93 | € 9,65 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu

