Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
24 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.8mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 10,05
€ 2,01 komadno (u pakiranju od 5) (bez PDV-a)
€ 12,56
€ 2,512 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 10,05
€ 2,01 komadno (u pakiranju od 5) (bez PDV-a)
€ 12,56
€ 2,512 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 45 | € 2,01 | € 10,05 |
| 50 - 245 | € 1,91 | € 9,55 |
| 250 - 495 | € 1,77 | € 8,85 |
| 500+ | € 1,72 | € 8,60 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
24 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.8mm
Zemlja podrijetla
China
Detalji o proizvodu


