Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Length
6.7mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 20,60
€ 1,03 komadno (u pakiranju od 20) (bez PDV-a)
€ 25,75
€ 1,288 komadno (u pakiranju od 20) (s PDV-om)
Standard
20
€ 20,60
€ 1,03 komadno (u pakiranju od 20) (bez PDV-a)
€ 25,75
€ 1,288 komadno (u pakiranju od 20) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
20
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 20 - 20 | € 1,03 | € 20,60 |
| 40 - 80 | € 0,83 | € 16,60 |
| 100 - 180 | € 0,76 | € 15,20 |
| 200 - 480 | € 0,73 | € 14,60 |
| 500+ | € 0,63 | € 12,60 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Length
6.7mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


