Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
960 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.7mm
Number of Elements per Chip
1
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 59,00
€ 0,59 Each (Supplied on a Reel) (bez PDV-a)
€ 73,75
€ 0,738 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
100
€ 59,00
€ 0,59 Each (Supplied on a Reel) (bez PDV-a)
€ 73,75
€ 0,738 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
100
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 100 - 240 | € 0,59 | € 5,90 |
| 250 - 490 | € 0,54 | € 5,40 |
| 500 - 990 | € 0,52 | € 5,20 |
| 1000+ | € 0,45 | € 4,50 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
960 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.7mm
Number of Elements per Chip
1
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


