Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Length
15.87mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
20.7mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 65,50
€ 6,55 Each (Supplied in a Bag) (bez PDV-a)
€ 81,88
€ 8,19 Each (Supplied in a Bag) (s PDV-om)
Proizvodno pakiranje (vrećica)
10
€ 65,50
€ 6,55 Each (Supplied in a Bag) (bez PDV-a)
€ 81,88
€ 8,19 Each (Supplied in a Bag) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (vrećica)
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena |
|---|---|
| 10 - 49 | € 6,55 |
| 50 - 99 | € 6,20 |
| 100 - 249 | € 6,05 |
| 250+ | € 5,90 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
120 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Length
15.87mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
20.7mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


