Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 113,00
€ 1,13 Each (Supplied on a Reel) (bez PDV-a)
€ 141,25
€ 1,412 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
100
€ 113,00
€ 1,13 Each (Supplied on a Reel) (bez PDV-a)
€ 141,25
€ 1,412 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
100
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 100 - 240 | € 1,13 | € 11,30 |
| 250 - 490 | € 1,06 | € 10,60 |
| 500 - 990 | € 1,04 | € 10,40 |
| 1000+ | € 1,02 | € 10,20 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


