Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 9,85
€ 1,97 Each (Supplied as a Tape) (bez PDV-a)
€ 12,31
€ 2,462 Each (Supplied as a Tape) (s PDV-om)
Standard
5
€ 9,85
€ 1,97 Each (Supplied as a Tape) (bez PDV-a)
€ 12,31
€ 2,462 Each (Supplied as a Tape) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po traka |
|---|---|---|
| 5 - 45 | € 1,97 | € 9,85 |
| 50 - 120 | € 1,89 | € 9,45 |
| 125 - 245 | € 1,77 | € 8,85 |
| 250 - 495 | € 1,73 | € 8,65 |
| 500+ | € 1,69 | € 8,45 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Zemlja podrijetla
China
Detalji o proizvodu


