Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
760 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
3.7mm
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 87,00
€ 0,87 Each (Supplied on a Reel) (bez PDV-a)
€ 108,75
€ 1,088 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
100
€ 87,00
€ 0,87 Each (Supplied on a Reel) (bez PDV-a)
€ 108,75
€ 1,088 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
100
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 100 - 240 | € 0,87 | € 8,70 |
| 250 - 490 | € 0,85 | € 8,50 |
| 500 - 990 | € 0,83 | € 8,30 |
| 1000+ | € 0,71 | € 7,10 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
760 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
3.7mm
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


