Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.4 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 8,40
€ 0,84 komadno (u pakiranju od 10) (bez PDV-a)
€ 10,50
€ 1,05 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 8,40
€ 0,84 komadno (u pakiranju od 10) (bez PDV-a)
€ 10,50
€ 1,05 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 90 | € 0,84 | € 8,40 |
| 100 - 240 | € 0,81 | € 8,10 |
| 250 - 490 | € 0,71 | € 7,10 |
| 500 - 990 | € 0,69 | € 6,90 |
| 1000+ | € 0,67 | € 6,70 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.4 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu


