Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
0.86 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Transistor Material
Si
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Detalji o proizvodu
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,56
Each (Supplied on a Reel) (bez PDV-a)
€ 0,70
Each (Supplied on a Reel) (s PDV-om)
10
€ 0,56
Each (Supplied on a Reel) (bez PDV-a)
€ 0,70
Each (Supplied on a Reel) (s PDV-om)
10
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
10 - 90 | € 0,56 | € 5,60 |
100 - 490 | € 0,43 | € 4,30 |
500 - 990 | € 0,42 | € 4,20 |
1000 - 2490 | € 0,34 | € 3,40 |
2500+ | € 0,30 | € 3,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
0.86 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Transistor Material
Si
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Detalji o proizvodu