Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
112 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
860 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,56
Each (Supplied on a Reel) (bez PDV-a)
€ 0,70
Each (Supplied on a Reel) (s PDV-om)
20
€ 0,56
Each (Supplied on a Reel) (bez PDV-a)
€ 0,70
Each (Supplied on a Reel) (s PDV-om)
20
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
20 - 180 | € 0,56 | € 11,20 |
200 - 480 | € 0,46 | € 9,20 |
500 - 980 | € 0,36 | € 7,20 |
1000 - 1980 | € 0,31 | € 6,20 |
2000+ | € 0,29 | € 5,80 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
112 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
860 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Zemlja podrijetla
China
Detalji o proizvodu