Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 11,10
€ 1,11 komadno (u pakiranju od 10) (bez PDV-a)
€ 13,88
€ 1,388 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 11,10
€ 1,11 komadno (u pakiranju od 10) (bez PDV-a)
€ 13,88
€ 1,388 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 90 | € 1,11 | € 11,10 |
| 100 - 240 | € 0,85 | € 8,50 |
| 250 - 490 | € 0,82 | € 8,20 |
| 500 - 990 | € 0,73 | € 7,30 |
| 1000+ | € 0,66 | € 6,60 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu


