Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
5.1 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 4.5 V, 9 nC @ 2.5 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Cijena na upit
komadno (u pakiranju od 10) (bez PDV-a)
10
Cijena na upit
komadno (u pakiranju od 10) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
10
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
5.1 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 4.5 V, 9 nC @ 2.5 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu


