Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.04mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 12,20
€ 0,61 komadno (u pakiranju od 20) (bez PDV-a)
€ 15,25
€ 0,762 komadno (u pakiranju od 20) (s PDV-om)
Standard
20
€ 12,20
€ 0,61 komadno (u pakiranju od 20) (bez PDV-a)
€ 15,25
€ 0,762 komadno (u pakiranju od 20) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
20
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 20 - 180 | € 0,61 | € 12,20 |
| 200 - 480 | € 0,48 | € 9,60 |
| 500 - 980 | € 0,46 | € 9,20 |
| 1000 - 1980 | € 0,44 | € 8,80 |
| 2000+ | € 0,42 | € 8,40 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.04mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu


