Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ 8 V
Height
1mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,25
Each (On a Reel of 3000) (bez PDV-a)
€ 0,312
Each (On a Reel of 3000) (s PDV-om)
3000
€ 0,25
Each (On a Reel of 3000) (bez PDV-a)
€ 0,312
Each (On a Reel of 3000) (s PDV-om)
3000
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
3000 - 3000 | € 0,25 | € 750,00 |
6000+ | € 0,24 | € 720,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ 8 V
Height
1mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu