Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.5mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 1,05
Each (Supplied on a Reel) (bez PDV-a)
€ 1,312
Each (Supplied on a Reel) (s PDV-om)
10
€ 1,05
Each (Supplied on a Reel) (bez PDV-a)
€ 1,312
Each (Supplied on a Reel) (s PDV-om)
10
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
10 - 90 | € 1,05 | € 10,50 |
100 - 240 | € 1,00 | € 10,00 |
250 - 490 | € 0,94 | € 9,40 |
500 - 990 | € 0,92 | € 9,20 |
1000+ | € 0,90 | € 9,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.5mm
Zemlja podrijetla
China
Detalji o proizvodu