Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC
Width
4mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.55mm
Zemlja podrijetla
China
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Provjerite ponovno kasnije.
€ 2,45
komadno (u pakiranju od 5) (bez PDV-a)
€ 3,062
komadno (u pakiranju od 5) (s PDV-om)
5
€ 2,45
komadno (u pakiranju od 5) (bez PDV-a)
€ 3,062
komadno (u pakiranju od 5) (s PDV-om)
5
Kupujte na veliko
količina | jedinična cijena | Po pakiranje |
---|---|---|
5 - 45 | € 2,45 | € 12,25 |
50 - 120 | € 2,25 | € 11,25 |
125 - 245 | € 2,20 | € 11,00 |
250 - 495 | € 2,15 | € 10,75 |
500+ | € 2,10 | € 10,50 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC
Width
4mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.55mm
Zemlja podrijetla
China