Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Detalji o proizvodu
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 1,98
komadno (u pakiranju od 5) (bez PDV-a)
€ 2,475
komadno (u pakiranju od 5) (s PDV-om)
5
€ 1,98
komadno (u pakiranju od 5) (bez PDV-a)
€ 2,475
komadno (u pakiranju od 5) (s PDV-om)
5
Kupujte na veliko
količina | jedinična cijena | Po pakiranje |
---|---|---|
5 - 45 | € 1,98 | € 9,90 |
50 - 245 | € 1,73 | € 8,65 |
250 - 495 | € 1,47 | € 7,35 |
500 - 1245 | € 1,27 | € 6,35 |
1250+ | € 1,20 | € 6,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Detalji o proizvodu