Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
KM 324,66
KM 3,247 Each (Supplied on a Reel) (bez PDV-a)
KM 379,85
KM 3,799 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
100
KM 324,66
KM 3,247 Each (Supplied on a Reel) (bez PDV-a)
KM 379,85
KM 3,799 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
100
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po kolut |
---|---|---|
100 - 240 | KM 3,247 | KM 32,47 |
250 - 490 | KM 2,836 | KM 28,36 |
500 - 990 | KM 2,777 | KM 27,77 |
1000+ | KM 2,699 | KM 26,99 |
Tehnička dokumentacija
Tehnički podaci
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu