Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Transistor Material
Si
Height
1.12mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 15,50
€ 1,55 komadno (u pakiranju od 10) (bez PDV-a)
€ 19,38
€ 1,938 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 15,50
€ 1,55 komadno (u pakiranju od 10) (bez PDV-a)
€ 19,38
€ 1,938 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 90 | € 1,55 | € 15,50 |
| 100 - 240 | € 1,48 | € 14,80 |
| 250 - 490 | € 1,40 | € 14,00 |
| 500 - 990 | € 1,37 | € 13,70 |
| 1000+ | € 1,33 | € 13,30 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Transistor Material
Si
Height
1.12mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu


