Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Length
6.25mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Forward Diode Voltage
1.1V
Detalji o proizvodu
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 2,60
komadno (u pakiranju od 5) (bez PDV-a)
€ 3,25
komadno (u pakiranju od 5) (s PDV-om)
5
€ 2,60
komadno (u pakiranju od 5) (bez PDV-a)
€ 3,25
komadno (u pakiranju od 5) (s PDV-om)
5
Kupujte na veliko
količina | jedinična cijena | Po pakiranje |
---|---|---|
5 - 45 | € 2,60 | € 13,00 |
50 - 120 | € 2,25 | € 11,25 |
125 - 245 | € 2,00 | € 10,00 |
250 - 495 | € 1,73 | € 8,65 |
500+ | € 1,42 | € 7,10 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Length
6.25mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Forward Diode Voltage
1.1V
Detalji o proizvodu