Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayMounting Type
Surface Mount
Package Type
TO-263AC
Maximum Continuous Forward Current
10A
Peak Reverse Repetitive Voltage
120V
Diode Configuration
Common Cathode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
940mV
Number of Elements per Chip
2
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
100A
Zemlja podrijetla
China
Detalji o proizvodu
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Schottky Rectifiers, Vishay Semiconductor
Cijena na upit
komadno (u pakiranju od 10) (bez PDV-a)
Standard
10
Cijena na upit
komadno (u pakiranju od 10) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayMounting Type
Surface Mount
Package Type
TO-263AC
Maximum Continuous Forward Current
10A
Peak Reverse Repetitive Voltage
120V
Diode Configuration
Common Cathode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
940mV
Number of Elements per Chip
2
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
100A
Zemlja podrijetla
China
Detalji o proizvodu
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.


