Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayMounting Type
Panel Mount
Package Type
TO-244
Maximum Continuous Forward Current
244A
Peak Reverse Repetitive Voltage
400V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
1.5V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
120ns
Peak Non-Repetitive Forward Surge Current
900A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 658,30
€ 65,83 komadno (u kutiji od 10) (bez PDV-a)
€ 822,88
€ 82,288 komadno (u kutiji od 10) (s PDV-om)
10
€ 658,30
€ 65,83 komadno (u kutiji od 10) (bez PDV-a)
€ 822,88
€ 82,288 komadno (u kutiji od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kutija |
|---|---|---|
| 10 - 10 | € 65,83 | € 658,30 |
| 20+ | € 63,44 | € 634,40 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
VishayMounting Type
Panel Mount
Package Type
TO-244
Maximum Continuous Forward Current
244A
Peak Reverse Repetitive Voltage
400V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
1.5V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
120ns
Peak Non-Repetitive Forward Surge Current
900A
Detalji o proizvodu
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.


