IGBT Transistors

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detalji proizvoda Proizvođač Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Gate Capacitance Energy Rating Maximum Operating Temperature Minimum Operating Temperature
STMicroelectronics IGBT STGW8M120DF3, 3-Pin TO 1200 V, 16 A @ +25°C STMicroelectronics 16 A @ +25°C 1200 V ±20V 167 W 1 TO Through Hole N 3 1MHz Single 15.75mm 5.15mm 20.1mm 15.75 x 5.15 x 20.15mm 542pF 1.24mJ +175 °C -55 °C
STMicroelectronics IGBT STGWT15H60F, 3-Pin TO 600 V, 30 A @ +25°C STMicroelectronics 30 A @ +25°C 600 V ±20V 115 W 1 TO Through Hole N 3 1MHz Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm 1952pF 553µJ +175 °C -55 °C
Infineon IGBT IHW40N120R3FKSA1, 3-Pin TO-247 1200 V, 80 A Infineon 80 A 1200 V ±20V 429 W 1 TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm - 2.02mJ +175 °C -40 °C
Infineon IGBT IGW50N65F5FKSA1, 3-Pin TO-247 650 V, 50 A Infineon 50 A 650 V ±20V 305 W - TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 3000pF 0.65mJ +175 °C -40 °C
Infineon IGBT IHW40N120R3FKSA1, 3-Pin TO-247 1200 V, 80 A Infineon 80 A 1200 V ±20V 429 W 1 TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm - 2.02mJ +175 °C -40 °C
Infineon IGBT IKP20N60TXKSA1, 3-Pin TO-220 600 V, 41 A Infineon 41 A 600 V ±20V 166 W 1 TO-220 Through Hole N 3 - Single 10.36mm 4.57mm 15.95mm 10.36 x 4.57 x 15.95mm - 0.77mJ +175 °C -40 °C
Infineon IGBT IKP20N60TXKSA1, 3-Pin TO-220 600 V, 41 A Infineon 41 A 600 V ±20V 166 W 1 TO-220 Through Hole N 3 - Single 10.36mm 4.57mm 15.95mm 10.36 x 4.57 x 15.95mm - 0.77mJ +175 °C -40 °C
Infineon IGBT IKW30N60H3FKSA1, 3-Pin TO-247 600 V, 60 A Infineon 60 A 600 V ±20V 187 W - TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 1630pF 1.72mJ +175 °C -40 °C
Infineon IGBT IKW50N65F5FKSA1, 3-Pin TO-247 650 V, 80 A Infineon 80 A 650 V ±20V 305 W - TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 3000pF 0.65mJ +175 °C -40 °C
ON Semiconductor IGBT NGTB45N60S2WG, 3-Pin TO-247 600 V, 90 A ON Semiconductor 90 A 600 V ±20V 300 W - TO-247 Through Hole N 3 1MHz Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm 3200pF 0.69mJ +175 °C -55 °C
ON Semiconductor IGBT NGTB50N60FWG, 3-Pin TO-247 600 V, 100 A ON Semiconductor 100 A 600 V ±20V 223 W - TO-247 Through Hole N 3 1MHz Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - - +150 °C -55 °C
ROHM P-channel IGBT RGT16NS65DGC9, 3+Tab-Pin I2PAK 650 (Minimum) V, 16 A
  • RS kat. broj 171-5345
  • robna marka ROHM
  • Pro. broj RGT16NS65DGC9
ROHM 16 A 650 (Minimum) V 30V 94 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 450pF - +175 °C -40 °C
ROHM P-channel IGBT RGT16NS65DGC9, 3+Tab-Pin I2PAK 650 (Minimum) V, 16 A
  • RS kat. broj 171-5506
  • robna marka ROHM
  • Pro. broj RGT16NS65DGC9
ROHM 16 A 650 (Minimum) V 30V 94 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 450pF - +175 °C -40 °C
ROHM P-channel IGBT RGT30NS65DGC9, 3+Tab-Pin I2PAK 650 (Minimum) V, 30 A
  • RS kat. broj 171-5347
  • robna marka ROHM
  • Pro. broj RGT30NS65DGC9
ROHM 30 A 650 (Minimum) V 30V 133 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 780pF - +175 °C -40 °C
ROHM P-channel IGBT RGT30NS65DGC9, 3+Tab-Pin I2PAK 650 (Minimum) V, 30 A
  • RS kat. broj 171-5593
  • robna marka ROHM
  • Pro. broj RGT30NS65DGC9
ROHM 30 A 650 (Minimum) V 30V 133 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 780pF - +175 °C -40 °C
ROHM P-channel IGBT RGT40NS65DGC9, 3+Tab-Pin I2PAK 650 (Minimum) V, 40 A
  • RS kat. broj 171-5349
  • robna marka ROHM
  • Pro. broj RGT40NS65DGC9
ROHM 40 A 650 (Minimum) V 30V 161 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 1070pF - +175 °C -40 °C
ROHM P-channel IGBT RGT40NS65DGC9, 3+Tab-Pin I2PAK 650 (Minimum) V, 40 A
  • RS kat. broj 171-5627
  • robna marka ROHM
  • Pro. broj RGT40NS65DGC9
ROHM 40 A 650 (Minimum) V 30V 161 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 1070pF - +175 °C -40 °C
STMicroelectronics IGBT STGW8M120DF3, 3-Pin TO 1200 V, 16 A @ +25°C STMicroelectronics 16 A @ +25°C 1200 V ±20V 167 W 1 TO Through Hole N 3 1MHz Single 15.75mm 5.15mm 20.1mm 15.75 x 5.15 x 20.15mm 542pF 1.24mJ +175 °C -55 °C
STMicroelectronics IGBT STGWT15H60F, 3-Pin TO 600 V, 30 A @ +25°C STMicroelectronics 30 A @ +25°C 600 V ±20V 115 W 1 TO Through Hole N 3 1MHz Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm 1952pF 553µJ +175 °C -55 °C
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