Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.77mm
Width
2.41mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.01mm
Detalji o proizvodu
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 116,265
komad ( isporučivo na traci) (bez PDV-a)
RSD 139,518
komad ( isporučivo na traci) (s PDV-om)
Proizvodno pakovanje (traka)
50
RSD 116,265
komad ( isporučivo na traci) (bez PDV-a)
RSD 139,518
komad ( isporučivo na traci) (s PDV-om)
Proizvodno pakovanje (traka)
50
Kupujte na veliko
količina | Jedinična cena | Po traka |
---|---|---|
50 - 95 | RSD 116,265 | RSD 581 |
100 - 495 | RSD 94,057 | RSD 470 |
500 - 995 | RSD 86,219 | RSD 431 |
1000+ | RSD 80,994 | RSD 405 |
Tehnička dokumentacija
Tehnički podaci
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.77mm
Width
2.41mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.01mm
Detalji o proizvodu