Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
28
Dimensions
18.11 x 7.62 x 2.37mm
Length
18.11mm
Width
7.62mm
Maximum Operating Supply Voltage
5.5 V
Height
2.37mm
Maximum Operating Temperature
+85 °C
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Zemlja podrijetla
United States
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Proverite ponovno kasnije.
RSD 2.351
komad (isporucivo u Tubi) (bez PDV-a)
RSD 2.822
komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
1
RSD 2.351
komad (isporucivo u Tubi) (bez PDV-a)
RSD 2.822
komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
28
Dimensions
18.11 x 7.62 x 2.37mm
Length
18.11mm
Width
7.62mm
Maximum Operating Supply Voltage
5.5 V
Height
2.37mm
Maximum Operating Temperature
+85 °C
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Zemlja podrijetla
United States
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.