Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Length
4.5mm
Width
4mm
Maximum Operating Supply Voltage
3.65 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Proverite ponovno kasnije.
RSD 823
komadno (u pakovanju od 2) (bez PDV-a)
RSD 987,60
komadno (u pakovanju od 2) (s PDV-om)
2
RSD 823
komadno (u pakovanju od 2) (bez PDV-a)
RSD 987,60
komadno (u pakovanju od 2) (s PDV-om)
2
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
2 - 8 | RSD 823 | RSD 1.646 |
10+ | RSD 725,024 | RSD 1.450 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Length
4.5mm
Width
4mm
Maximum Operating Supply Voltage
3.65 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Detalji o proizvodu
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.