N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK Infineon IPD031N06L3GATMA1

RS kataloški broj:: 825-9162brend: InfineonProizvođački broj:: IPD031N06L3GATMA1
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

OptiMOS 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

59 nC @ 4.5 V

Width

6.223mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.413mm

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 245,594

komadno (u pakovanju od 10) (bez PDV-a)

RSD 294,713

komadno (u pakovanju od 10) (s PDV-om)

N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK Infineon IPD031N06L3GATMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10RSD 2.456
20RSD 4.912
30RSD 7.368
40RSD 9.824
50RSD 12.280
60RSD 14.736
70RSD 17.192
80RSD 19.647
90RSD 22.103
100RSD 24.559
110RSD 27.015
120RSD 29.471
130RSD 31.927
140RSD 34.383
150RSD 36.839

RSD 245,594

komadno (u pakovanju od 10) (bez PDV-a)

RSD 294,713

komadno (u pakovanju od 10) (s PDV-om)

N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK Infineon IPD031N06L3GATMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10RSD 2.456
20RSD 4.912
30RSD 7.368
40RSD 9.824
50RSD 12.280
60RSD 14.736
70RSD 17.192
80RSD 19.647
90RSD 22.103
100RSD 24.559
110RSD 27.015
120RSD 29.471
130RSD 31.927
140RSD 34.383
150RSD 36.839

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

OptiMOS 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

59 nC @ 4.5 V

Width

6.223mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.413mm

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više