P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1

RS kataloški broj:: 898-6864brend: InfineonProizvođački broj:: SPD30P06PGBTMA1
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.7V

Height

2.41mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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RSD 2.678

RSD 267,802 komadno (u pakovanju od 10) (bez PDV-a)

RSD 3.214

RSD 321,362 komadno (u pakovanju od 10) (s PDV-om)

P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10RSD 2.678
20RSD 5.356
30RSD 8.034
40RSD 10.712
50RSD 12.868
60RSD 15.441
70RSD 18.015
80RSD 20.588
90RSD 23.162
100RSD 25.735
110RSD 28.309
120RSD 30.882
130RSD 33.456
140RSD 36.029
150RSD 38.603

RSD 2.678

RSD 267,802 komadno (u pakovanju od 10) (bez PDV-a)

RSD 3.214

RSD 321,362 komadno (u pakovanju od 10) (s PDV-om)

P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u mašine, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10RSD 2.678
20RSD 5.356
30RSD 8.034
40RSD 10.712
50RSD 12.868
60RSD 15.441
70RSD 18.015
80RSD 20.588
90RSD 23.162
100RSD 25.735
110RSD 28.309
120RSD 30.882
130RSD 33.456
140RSD 36.029
150RSD 38.603

Kupujte na veliko

količinaJedinična cenaPo pakovanje
10 - 40RSD 267,802RSD 2.678
50 - 240RSD 257,351RSD 2.574
250 - 490RSD 222,079RSD 2.221
500 - 1240RSD 202,484RSD 2.025
1250+RSD 167,213RSD 1.672

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.7V

Height

2.41mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više