Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Length
10.53mm
Height
15.75mm
Width
4.83mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
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RSD 194,646
komad (u Tubi od 50) (bez PDV-a)
RSD 233,575
komad (u Tubi od 50) (s PDV-om)
50
RSD 194,646
komad (u Tubi od 50) (bez PDV-a)
RSD 233,575
komad (u Tubi od 50) (s PDV-om)
50
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Length
10.53mm
Height
15.75mm
Width
4.83mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China