Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Height
16.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 496,413
komad (u Tubi od 1000) (bez PDV-a)
RSD 595,696
komad (u Tubi od 1000) (s PDV-om)
1000
RSD 496,413
komad (u Tubi od 1000) (bez PDV-a)
RSD 595,696
komad (u Tubi od 1000) (s PDV-om)
1000
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Height
16.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Zemlja podrijetla
China