Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
Malaysia
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 160,681
komad (u Reel od 1500) (bez PDV-a)
RSD 192,817
komad (u Reel od 1500) (s PDV-om)
1500
RSD 160,681
komad (u Reel od 1500) (bez PDV-a)
RSD 192,817
komad (u Reel od 1500) (s PDV-om)
1500
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
Malaysia