N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STMicroelectronics STB18N60M2
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Height
4.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 2.051
RSD 410,194 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.461
RSD 492,233 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 2.051
RSD 410,194 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.461
RSD 492,233 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Kupujte na veliko
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 5 - 20 | RSD 410,194 | RSD 2.051 |
| 25 - 45 | RSD 395,824 | RSD 1.979 |
| 50 - 120 | RSD 371,003 | RSD 1.855 |
| 125 - 245 | RSD 347,489 | RSD 1.737 |
| 250+ | RSD 343,57 | RSD 1.718 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
9.35mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
21.5 nC @ 10 V
Height
4.6mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda