STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 400 mA, 600 V, 3-Pin SOT-223 STN1HNK60
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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KM 25,03
KM 2,503 Each (In a Pack of 10) (bez PDV-a)
KM 29,29
KM 2,929 Each (In a Pack of 10) (s PDV-om)
Standard
10
KM 25,03
KM 2,503 Each (In a Pack of 10) (bez PDV-a)
KM 29,29
KM 2,929 Each (In a Pack of 10) (s PDV-om)
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
| količina | Jedinična cijena | Po pakovanje |
|---|---|---|
| 10 - 20 | KM 2,503 | KM 25,03 |
| 30 - 90 | KM 2,406 | KM 24,06 |
| 100 - 490 | KM 1,897 | KM 18,97 |
| 500 - 990 | KM 1,662 | KM 16,62 |
| 1000+ | KM 1,389 | KM 13,89 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda