Tehnička dokumentacija
Tehnički podaci
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-30 V, +30 V
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Width
4.6mm
Maximum Power Dissipation
35 W
Package Type
TO-220FP
Maximum Continuous Drain Current
10 A
Length
10.4mm
Height
9.3mm
Maximum Drain Source Resistance
750 mΩ
Brand
STMicroelectronicsTypical Gate Charge @ Vgs
50 nC @ 10 V
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Proverite ponovno kasnije.
RSD 561,73
Each (In a Pack of 5) (bez PDV-a)
RSD 674,076
Each (In a Pack of 5) (s PDV-om)
Standard
5
RSD 561,73
Each (In a Pack of 5) (bez PDV-a)
RSD 674,076
Each (In a Pack of 5) (s PDV-om)
Standard
5
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
5 - 5 | RSD 561,73 | RSD 2.809 |
10 - 95 | RSD 483,349 | RSD 2.417 |
100 - 495 | RSD 391,905 | RSD 1.960 |
500 - 995 | RSD 346,182 | RSD 1.731 |
1000+ | RSD 300,46 | RSD 1.502 |
Tehnička dokumentacija
Tehnički podaci
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-30 V, +30 V
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Width
4.6mm
Maximum Power Dissipation
35 W
Package Type
TO-220FP
Maximum Continuous Drain Current
10 A
Length
10.4mm
Height
9.3mm
Maximum Drain Source Resistance
750 mΩ
Brand
STMicroelectronicsTypical Gate Charge @ Vgs
50 nC @ 10 V