Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
20.15mm
Detalji o proizvodu
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 1.863
RSD 931,427 komadno (u pakovanju od 2) (bez PDV-a)
RSD 2.235
RSD 1.117,712 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
RSD 1.863
RSD 931,427 komadno (u pakovanju od 2) (bez PDV-a)
RSD 2.235
RSD 1.117,712 komadno (u pakovanju od 2) (s PDV-om)
Standard
2
Kupujte na veliko
količina | Jedinična cena | Po pakovanje |
---|---|---|
2 - 8 | RSD 931,427 | RSD 1.863 |
10 - 18 | RSD 898,768 | RSD 1.798 |
20 - 48 | RSD 841,289 | RSD 1.683 |
50 - 98 | RSD 789,035 | RSD 1.578 |
100+ | RSD 777,278 | RSD 1.555 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Series
MDmesh DM2
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.75mm
Typical Gate Charge @ Vgs
39 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
20.15mm
Detalji o proizvodu
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.