Tehnička dokumentacija
Tehnički podaci
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1V
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
RSD 60,092
komad (u Reel od 2500) (bez PDV-a)
RSD 72,11
komad (u Reel od 2500) (s PDV-om)
2500
RSD 60,092
komad (u Reel od 2500) (bez PDV-a)
RSD 72,11
komad (u Reel od 2500) (s PDV-om)
2500
Tehnička dokumentacija
Tehnički podaci
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1V